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M27W202
2 Mbit (128Kb x16) Low Voltage UV EPROM and OTP EPROM
s
2.7V to 3.6V SUPPLY VOLTAGE in READ OPERATION ACCESS TIME: - 80ns at VCC = 3.0V to 3.6V - 100ns at VCC = 2.7V to 3.6V
40 40
s
s
LOW POWER CONSUMPTION: - Active Current 20mA at 5MHz - Standby Current 15A
1
1
FDIP40W (F)
PDIP40 (B)
s s s
PIN COMPATIBLE with M27C202 PROGRAMMING TIME: 100s/word HIGH RELIABILITY CMOS TECHNOLOGY - 2,000V ESD Protection - 200mA Latchup Protection Immunity
PLCC44 (K)
s
ELECTRONIC SIGNATURE - Manufacturer Code: 0020h - Device Code: 001Ch Figure 1. Logic Diagram
TSOP40 (N) 10 x 14 mm
DESCRIPTION The M27W202 is a low voltage 2 Mbit EPROM offered in the two range UV (ultra violet erase) and OTP (one time programmable). It is ideally suited for microprocessor systems requiring large data or program storage and is organised as 131,072 by 16 bits. The M27W202 operates in the read mode with a supply voltage as low as 2.7V at -40 to 85C temperature range. The decrease in operating power allows either a reduction of the size of the battery or an increase in the time between battery recharges. The FDIP40W (window ceramic frit-seal package) has a transparent lid which allows the user to expose the chip to ultraviolet light to erase the bit pattern. A new pattern can then be written to the device by following the programming procedure. For application where the content is programmed only one time and erasure is not required, the M27W201 is offered in PDIP40, PLCC44 and TSOP40 (10 x 14 mm) packages.
VCC
VPP
17 A0-A16
16 Q0-Q15
P E G
M27W202
VSS
AI02730
April 2000
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M27W202
Figure 2A. DIP Connections
VPP E Q15 Q14 Q13 Q12 Q11 Q10 Q9 Q8 VSS Q7 Q6 Q5 Q4 Q3 Q2 Q1 Q0 G 1 40 2 39 3 38 4 37 5 36 6 35 7 34 8 33 9 32 10 31 M27W202 11 30 12 29 13 28 14 27 15 26 16 25 17 24 18 23 19 22 20 21
AI02731
Figure 2B. LCC Connections
VCC P A16 A15 A14 A13 A12 A11 A10 A9 VSS A8 A7 A6 A5 A4 A3 A2 A1 A0
Q12 Q11 Q10 Q9 Q8 VSS NC Q7 Q6 Q5 Q4
Q13 Q14 Q15 E VPP NC VCC P A16 A15 A14 1 44 A13 A12 A11 A10 A9 VSS NC A8 A7 A6 A5 12 M27W202 34 23 Q3 Q2 Q1 Q0 G NC A0 A1 A2 A3 A4
AI02732
Figure 2C. TSOP Connections
A9 A10 A11 A12 A13 A14 A15 A16 P VCC VPP E DQ15 DQ14 DQ13 DQ12 DQ11 DQ10 DQ9 DQ8 1 40 VSS A8 A7 A6 A5 A4 A3 A2 A1 A0 G DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 VSS
Table 1. Signal Names
A0-A16 Q0-Q15 E G P VPP VCC VSS NC Address Inputs Data Outputs Chip Enable Output Enable Program Program Supply Supply Voltage Ground Not Connected Internally
10 11
M27W202 (Normal)
31 30
20
21
AI02733
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M27W202
Table 2. Absolute Maximum Ratings (1)
Symbol TA TBIAS TSTG VIO (2) VCC VA9 (2) VPP Parameter Ambient Operating Temperature (3) Temperature Under Bias Storage Temperature Input or Output Voltage (except A9) Supply Voltage A9 Voltage Program Supply Voltage Value -40 to 125 -50 to 125 -65 to 150 -2 to 7 -2 to 7 -2 to 13.5 -2 to 14 Unit C C C V V V V
Note: 1. Except for the rating "Operating Temperature Range", stresses above those listed in the Table "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions above those indicated in the Operating sections of this specification is not implied. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability. Refer also to the STMicroelectronics SURE Program and other relevant quality documents. 2. Minimum DC voltage on Input or Output is -0.5V with possible undershoot to -2.0V for a period less than 20ns. Maximum DC voltage on Output is VCC +0.5V with possible overshoot to VCC +2V for a period less than 20ns. 3. Depends on range.
Table 3. Operating Modes
Mode Read Output Disable Program Verify Program Inhibit Standby Electronic Signature
Note: X = VIH or VIL, VID = 12V 0.5V.
E VIL VIL VIL VIL VIH VIH VIL
G V IL VIH X V IL X X V IL
P V IH X VIL Pulse V IH X X V IH
A9 X X X X X X VID
V PP VCC or VSS VCC or VSS V PP V PP V PP VCC or VSS VCC
Q15-Q0 Data Output Hi-Z Data Input Data Output Hi-Z Hi-Z Codes
Table 4. Electronic Signature
Identifier Manufacturer's Code Device Code A0 VIL VIH Q7 0 0 Q6 0 0 Q5 1 0 Q4 0 1 Q3 0 1 Q2 0 1 Q1 0 0 Q0 0 0 Hex Data 20h 1Ch
Note: Outputs Q15-Q8 are set to '0'.
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M27W202
Table 5. AC Measurement Conditions
High Speed Input Rise and Fall Times Input Pulse Voltages Input and Output Timing Ref. Voltages 10ns 0 to 3V 1.5V Standard 20ns 0.4V to 2.4V 0.8V and 2V
Figure 3. AC Testing Input Output Waveform
Figure 4. AC Testing Load Circuit
1.3V
High Speed 3V 1.5V 0V DEVICE UNDER TEST 2.0V 0.8V
AI01822
1N914
3.3k
Standard 2.4V
OUT CL
0.4V
CL = 30pF for High Speed CL = 100pF for Standard CL includes JIG capacitance
AI01823B
Table 6. Capacitance (1) (TA = 25 C, f = 1 MHz)
Symbol C IN COUT Parameter Input Capacitance Output Capacitance Test Condit ion VIN = 0V VOUT = 0V Min Max 6 12 Unit pF pF
Note: 1. Sampled only, not 100% tested.
DEVICE OPERATION The operating modes of the M27W202 are listed in the Operating Modes table. A single power supply is required in the read mode. All inputs are TTL levels except for VPP and 12V on A9 for Electronic Signature. Read Mode The M27W202 has two control functions, both of which must be logically active in order to obtain data at the outputs. Chip Enable (E) is the power control and should be used for device selection. Output Enable (G) is the output control and should be used to gate data to the output pins, independent of device selection. Assuming that the addresses are stable, the address access time
(tAVQV) is equal to the delay from E to output (tELQV). Data is available at the output after a delay of tOE from the falling edge of G, assuming that E has been low and the addresses have been stable for at least tAVQV-t GLQV. Standby Mode The M27W202 has a standby mode which reduces the supply current from 15mA to 15A with low voltage operation VCC a 3.6V, see Read Mode DC Characteristics table for details. The M27W202 is placed in the standby mode by applying a TTL high signal to the E input. When in the standby mode, the outputs are in a high impedance state, independent of the G input.
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M27W202
Table 7. Read Mode DC Characteristics (1) (TA = -40 to 85 C; VCC = 2.7V to 3.6V; VPP = VCC)
Symbol ILI ILO ICC ICC1 ICC2 IPP VIL VIH (2) VOL VOH Parameter Input Leakage Current Output Leakage Current Supply Current Supply Current (Standby) TTL Supply Current (Standby) CMOS Program Current Input Low Voltage Input High Voltage Output Low Voltage Output High Voltage TTL IOL = 2.1mA IOH = -400A 2.4 Test Condition 0V VIN VCC 0V VOUT VCC E = VIL , G = VIL, IOUT = 0mA, f = 5MHz VCC 3.6V E = VIH E > VCC - 0.2V VCC 3.6V V PP = VCC -0.6 0.7 VCC Min Max 10 10 20 1 15 10 0.2 VCC VCC + 0.5 0.4 Unit A A mA mA A A V V V V
Note: 1. VCC must be applied simultaneously with or before VPP and removed simultaneously or after V PP. 2. Maximum DC voltage on Output is VCC +0.5V.
Two Line Output Control Because OTP EPROMs are usually used in larger memory arrays, this product features a 2 line control function which accommodates the use of multiple memory connection. The two line control function allows: a. the lowest possible memory power dissipation, b. complete assurance that output bus contention will not occur. For the most efficient use of these two control lines, E should be decoded and used as the primary device selecting function, while G should be made a common connection to all devices in the array and connected to the READ line from the system control bus. This ensures that all deselected memory devices are in their low power standby mode and that the output pins are only active when data is required from a particular memory device.
System Considerations The power switching characteristics of Advanced CMOS EPROMs require careful decoupling of the devices. The supply current, I CC, has three segments that are of interest to the system designer: the standby current level, the active current level, and transient current peaks that are produced by the falling and rising edges of E. The magnitude of transient current peaks is dependent on the capacitive and inductive loading of the device at the output. The associated transient voltage peaks can be suppressed by complying with the two line output control and by properly selected decoupling capacitors. It is recommended that a 0.1F ceramic capacitor be used on every device between VCC and VSS. This should be a high frequency capacitor of low inherent inductance and should be placed as close to the device as possible. In addition, a 4.7F bulk electrolytic capacitor should be used between VCC and VSS for every eight devices. The bulk capacitor should be located near the power supply connection point.The purpose of the bulk capacitor is to overcome the voltage drop caused by the inductive effects of PCB traces.
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M27W202
Table 8. Read Mode AC Characteristics (1) (TA = -40 to 85 C; VCC = 2.7V to 3.6V; VPP = VCC)
M27W202 Test Condition Min tAVQV tELQV tGLQV tEHQZ (2) tGHQZ (2) tAXQX tACC tCE tOE tDF tDF tOH Address Valid to Output Valid Chip Enable Low to Output Valid Output Enable Low to Output Valid Chip Enable High to Output Hi-Z Output Enable High to Output Hi-Z Address Transition to Output Transition E = VIL, G = VIL G = VIL E = VIL G = VIL E = VIL E = VIL, G = VIL 0 0 0 -100 (3) -120 (-150/-200)
Symbol
Alt
Parameter
Unit
VCC = 3.0V to 3.6V VCC = 2.7V to 3.6V VCC = 2.7V to 3.6V Max 80 80 50 50 50 0 0 0 Min Max 100 100 60 60 60 0 0 0 Min Max 120 120 70 70 70 ns ns ns ns ns ns
Note: 1. VCC must be applied simultaneously with or before VPP and removed simultaneously or after V PP. 2. Sampled only, not 100% tested. 3. Speed obtained with High Speed AC measurement conditions.
Figure 5. Read Mode AC Waveforms
A0-A16
VALID tAVQV tAXQX
VALID
E tGLQV G tELQV Q0-Q15 tGHQZ Hi-Z tEHQZ
AI01818B
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M27W202
Table 9. Programming Mode DC Characteristics (1) (TA = 25 C; VCC = 6.25V 0.25V; VPP = 12.75V 0.25V)
Symbol ILI ICC IPP VIL VIH VOL VOH VID Parameter Input Leakage Current Supply Current Program Current Input Low Voltage Input High Voltage Output Low Voltage Output High Voltage TTL A9 Voltage IOL = 2.1mA IOH = -400A 2.4 11.5 12.5 E = VIL -0.3 2 Test Condition 0 V IN VIH Min Max 10 50 50 0.8 VCC + 0.5 0.4 Unit A mA mA V V V V V
Note: 1. VCC must be applied simultaneously with or before VPP and removed simultaneously or after V PP.
Table 10. Programming Mode AC Characteristics (1) (TA = 25 C; VCC = 6.25V 0.25V; VPP = 12.75V 0.25V)
Symbol tAVPL tQVPL tVPHPL tVCHPL tELPL tPLPH tPHQX tQXGL tGLQV tGHQZ (2) tGHAX Alt tAS tDS tVPS tVCS tCES tPW t DH tOES t OE tDFP tAH Parameter Address Valid to Program Low Input Valid to Program Low VPP High to Program Low VCC High to Program Low Chip Enable Low to Program Low Program Pulse Width Program High to Input Transition Input Transition to Output Enable Low Output Enable Low to Output Valid Output Enable High to Output Hi-Z Output Enable High to Address Transition 0 0 Min 2 2 2 2 2 95 2 2 100 130 105 Max Unit s s s s s s s s ns ns ns
Note: 1. VCC must be applied simultaneously with or before VPP and removed simultaneously or after V PP. 2. Sampled only, not 100% tested.
Programming When delivered, all bits of the M27W202 are in the '1' state. Data is introduced by selectively programming '0's into the desired bit locations. Although only '0's will be programmed, both '1's and '0's can be present in the data word. The
M27W202 is in the programming mode when VPP input is at 12.75V, E is at VIL and P is pulsed to VIL. The data to be programmed is applied to 16 bits in parallel, to the data output pins. The levels required for the address and data inputs are TTL. VCC is specified to be 6.25V 0.25V.
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M27W202
Figure 6. Programming and Verify Modes AC Waveforms
A0-A15 tAVPL Q0-Q15 tQVPL VPP tVPHPL VCC tVCHPL E tELPL P tPLPH G DATA IN
VALID
DATA OUT tPHQX
tGLQV
tGHQZ
tGHAX
tQXGL
PROGRAM
VERIFY
AI00706
Figure 7. Programming Flowchart
VCC = 6.25V, VPP = 12.75V
n =0
P = 100s Pulse NO ++n = 25 YES NO VERIFY YES Last Addr NO ++ Addr
FAIL
YES CHECK ALL WORDS 1st: VCC = 5V 2nd: VCC = 2.7V
AI02734
PRESTO II Programming Algorithm PRESTO II Programming Algorithm allows programming of the whole array with a guaranteed margin, in a typical time of 13 seconds. Programming with PRESTO II consists of applying a sequence of 100 s program pulses to each word until a correct verify occurs (see Figure 7). During programming and verify operation, a MARGIN MODE circuit is automatically activated in order to guarantee that each cell is programmed with enough margin. No overprogram pulse is applied since the verify in MARGIN MODE at V CC much higher than 3.6V, provides necessary margin to each programmed cell. Program Inhibit Programming of multiple M27W202s in parallel with different data is also easily accomplished. Except for E, all like inputs including G of the parallel M27W202 may be common. A TTL low level pulse applied to a M27W202's P input, with E low and VPP at 12.75V, will program that M27W202. A high level E input inhibits the other M27W202s from being programmed. Program Verify A verify (read) should be performed on the programmed bits to determine that they were correctly programmed. The verify is accomplished with E and G at VIL, P at VIH, VPP at 12.75V and VCC at 6.25V.
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M27W202
On-Board Programming The M27W202 can be directly programmed in the application circuit. See the relevant Application Note AN620. Electronic Signature The Electronic Signature (ES) mode allows the reading out of a binary code from an EPROM that will identify its manufacturer and type. This mode is intended for use by programming equipment to automatically match the device to be programmed with its corresponding programming algorithm. The ES mode is functional in the 25C 5C ambient temperature range that is required when programming the M27W202. To activate the ES mode, the programming equipment must force 11.5V to 12.5V on address line A9 of the M27W202 with VPP = VCC = 5V. Two identifier bytes may then be sequenced from the device outputs by toggling address line A0 from VIL to VIH. All other address lines must be held at V IL during Electronic Signature mode. Byte 0 (A0 = VIL) represents the manufacturer code and byte 1 (A0 = VIH) the device identifier code. For the STMicroelectronics M27W202, these two identifier bytes are given in Table 4 and can be read-out on outputs Q7 to Q0. ERASURE OPERATION (applies to UV EPROM) The erasure characteristics of the M27W201 are such that erasure begins when the cells are exposed to light with wavelengths shorter than approximately 4000 A. It should be noted that sunlight and some type of fluorescent lamps have wavelengths in the 3000-4000 A range. Data shows that constant exposure to room level fluorescent lighting could erase a typical M27W201 in about 3 years, while it would take approximately 1 week to cause erasure when exposed to direct sunlight. If the M27W201 is to be exposed to these types of lighting conditions for extended periods of time, it is suggested that opaque labels be put over the M27W201 window to prevent unintentional erasure. The recommended erasure procedure for the M27W201 is exposure to short wave ultraviolet light which has wavelength of 2537 A. The integrated dose (i.e. UV intensity x exposure time) for erasure should be a minimum of 15 W-sec/cm2. The erasure time with this dosage is approximately 15 to 20 minutes using an ultraviolet lamp with 12000 W/cm2 power rating. The M27W201 should be placed within 2.5 cm (1 inch) of the lamp tubes during the erasure. Some lamps have a filter on their tubes which should be removed before erasure.
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M27W202
Table 11. Ordering Information Scheme
Example: Device Type M27 Supply Voltage W = 2.7V to 3.6V Device Function 202 = 2 Mbit (128Kb x16) Speed -100 (1,2) = 100ns -120= 120ns Not For New Design (3) -150 = 150 ns -200 = 200 ns Package F = FDIP40W (4) B = PDIP40 K = PLCC44 N = TSOP40: 10 x 14 mm (4) Temperature Range 6 = -40 to 85 C Optio ns TR = Tape & Reel Packing M27W202 -100 K 6 TR
Note: 1. 2. 3. 4.
High Speed, see AC Characteristics section for further information. This speed also guarantees 80ns access time at VCC = 3.0V to 3.6V. These speeds are replaced by the 120ns. Packages option available on request. Please contact STMicroelectronics local Sales Office.
For a list of available options (Speed, Package, etc...) or for further information on any aspect of this device, please contact the STMicroelectronics Sales Office nearest to you. Table 12. Revision History
Date November 1998 04/19/00 First Issue From Product Preview to Data Sheet FDIP40W Package added ICC2 Stanbdy current changed Revision Details
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M27W202
Table 13. FDIP40W - 40 lead Ceramic Frit-seal DIP with window, Package Mechanical Data
Symbol A A1 A2 A3 B B1 C D D2 E E1 e eA eB L S N 8.13 2.54 14.99 48.26 15.24 1.45 0.51 3.91 3.89 0.41 - 0.23 51.79 - - 13.06 - - 16.18 3.18 1.52 - 4 40 mm Typ Min Max 5.72 1.40 4.57 4.50 0.56 - 0.30 52.60 - - 13.36 - - 18.03 4.10 2.49 - 11 0.320 0.100 0.590 1.900 0.600 0.057 0.020 0.154 0.153 0.016 - 0.009 2.039 - - 0.514 - - 0.637 0.125 0.060 - 4 40 Typ inches Min Max 0.225 0.055 0.180 0.177 0.022 - 0.012 2.071 - - 0.526 - - 0.710 0.161 0.098 - 11
Figure 8. FDIP40W - 40 lead Ceramic Frit-seal DIP with window, Package Outline
A2
A3 A1 B1 B D2 D S
N 1
A L eA eB C
e
E1
E
FDIPW-a
Drawing is not to scale.
11/15
M27W202
Table 14. PDIP40 - 40 pin Plastic DIP, 600 mils width, Package Mechanical Data
Symbol Typ A A1 A2 B B1 C D D2 E E1 e1 eA eB L S N 2.54 15.24 48.26 4.45 0.64 mm Min - 0.38 3.56 0.38 1.14 0.20 51.78 - 14.80 13.46 - - 15.24 3.05 1.52 0 40 Max - - 3.91 0.53 1.78 0.31 52.58 - 16.26 13.99 - - 17.78 3.81 2.29 15 0.100 0.600 1.900 Typ 0.175 0.025 inches Min - 0.015 0.140 0.015 0.045 0.008 2.039 - 0.583 0.530 - - 0.600 0.120 0.060 0 40 0.700 0.150 0.090 15 Max - - 0.154 0.021 0.070 0.012 2.070 - 0.640 0.551 -
Figure 9. PDIP40 - 40 lead Plastic DIP, 600 mils width, Package Outline
A2 A1 B1 B D2 D S
N
A L eA eB C
e1
E1
1
E
PDIP
Drawing is not to scale.
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M27W202
Table 15. PLCC44 - 44 lead Plastic Leaded Chip Carrier, Package Mechanical Data
mm Symbol Typ A A1 A2 B B1 D D1 D2 E E1 E2 e F R N CP 0.89 1.27 Min 4.20 2.29 - 0.33 0.66 17.40 16.51 14.99 17.40 16.51 14.99 - 0.00 - 44 0.10 Max 4.70 3.04 0.51 0.53 0.81 17.65 16.66 16.00 17.65 16.66 16.00 - 0.25 - 0.035 0.050 Typ Min 0.165 0.090 - 0.013 0.026 0.685 0.650 0.590 0.685 0.650 0.590 - 0.000 - 44 0.004 Max 0.185 0.120 0.020 0.021 0.032 0.695 0.656 0.630 0.695 0.656 0.630 - 0.010 - inches
Figure 10. PLCC44 - 44 lead Plastic Leaded Chip Carrier, Package Outline D D1
1N
A1 A2
B1
Ne
E1 E
F 0.51 (.020)
D2/E2 B
e
1.14 (.045)
Nd
A R CP
PLCC
Drawing is not to scale.
13/15
M27W202
Table 16. TSOP40 - 40 lead Plastic Thin Small Outline, 10 x 14 mm, Package Mechanical Data
mm Symbol Typ A A1 A2 B C D D1 E e L N CP 0.50 0.05 0.95 0.17 0.10 13.80 12.30 9.90 - 0.50 0 40 0.10 Min Max 1.20 0.15 1.05 0.27 0.21 14.20 12.50 10.10 - 0.70 5 0.0197 0.0020 0.0374 0.0067 0.0039 0.5433 0.4843 0.3898 - 0.0197 0 40 0.0039 Typ Min Max 0.0472 0.0059 0.0413 0.0106 0.0083 0.5591 0.4921 0.3976 - 0.0276 5 inches
Figure 11. TSOP40 - 40 lead Plastic Thin Small Outline, 10 x 14 mm, Package Outline A2
1 N
e E B
N/2
D1 D
A CP
DIE
C
TSOP-a
A1
L
Drawing is not to scale.
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M27W202
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in lif e support devices or systems without express written approval of STMicroelectronics. The ST logo is registered trademark of STMicroelectronics (R) 2000 STMicroelectronics - All Rights Reserved All other names are the property of their respective owners. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A . http://w ww.st.com
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